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Fs8205a manufacturer tech public mfr. , danshui dist, new taipei city 251, taiwan tel. file size: 767kbytes. download it by clicking the button below. output characteristics. tech public electrical characteristics ( ta = fs8205a dual n- channel enhancement power mosfet 250c unless otherwise noted max. 5 2/ 6 fortune semiconductor corporation. dual n- channel enhancement mode power mosfet. this pdf data sheet is for the fortune semiconductor fs8205a dual n- channel enhancement mode power mosfet. file size: 758kbytes.
features – low on- resistance. fortune semiconductor corporation reserves the. z 20v/ 6a, rds( on) 25mω @ vgs= 4. fs8205a manufacturer fortune semicon mfr. storage temperature range : tstg = - 55 to 150 ℃ 7. fs8205a datasheet, fs8205a pdf, fs8205a pinout, equivalent, replacement - dual n- channel enhancement mode power mosfet - fortune semiconductor, schematic, circuit, manual. you can download and save it for offline use, including viewing it on your device or printing it for your convenience if you prefer a paper version. applications – li- ion battery management applications ( pdf) datasheet in english ( en) fs8205a datasheet pdf language. com fs8205a dual n- channel enhancement mode mosfet.
guaranteed by design, not subject to production testing. fs8205a datasheet( pdf) 5 page - fortune semiconductor corp. description: dual n- channel enhancement mode power mosfet. 1 low on- resistance1. total power dissipation : pd = w 6. - fs8205 more results similar description - fs8205 more results link url part # : fs8205.
fortune semiconductor fs8205a 8- pin dual n- channel enhancement mode power mosfet in tssop- 8. , danshui town, taipei county 251, taiwan tel. 5v z super high dense cell design z reliable and rugged z lead free available ( rohs compliant) pin description. drain- source voltage : vds = 20 v 2. part # fs8205a: description dual n- channel enhancement mode power mosfet: download 6 pages: scroll/ zoom: 100% : manufacturer. 5v rds( on) 34mω @ vgs= 2. 2 2/ 6 fortune semiconductor corporation 富晶電子股份有限公司 28f. 7 fs8205- ds- 17_ en nov datasheet fs8205 dual n- channel enhancement mode power mosfet fortune semiconductor corporation 富晶電子股份有限公司 28f. - fs8205 a more results similar description - fs8205a more results link url fs8205a1.
tw off characteristics parameter drain- source breakdown voltage zero gate voltage drain current gate- body leakag. product summary n- channel enhancement mode mosfet absolute maximum ratings ( ta= 25° c unless otherwise noted) electrical characteristics ( ta= 25 oc, unless otherwise noted) notes: pulse test: pulse width < 300μs, duty cycle ≤ 2%. 2rds ( on) = 37 mω max. part # fs8205a jlcpcb part # c908265 package sot- 23- 6l description 20v 6a 5v, 6a 1. description fs8205a datasheet pdf dual n- channel enhancement mode power mosfet fs8205 datasheet ( html) - fortune semiconductor corp.
this manual contains new product information. part # fs8205a jlcpcb part # c16052 package tssop- 8 description 20v 6a 5v, 4a 1w 2 n- channel tssop- 8 mosfets rohs datasheet download source jlcpcb assembly type smt assembly. 3 / 6 page similar part no. this is dual n- channel enhancement mode mosfet. - fs8205 a more results similar description - fs8205a more results link url part # : fs8205a. 富晶電子股份有限公司. pdf download html fs8205 datasheet ( pdf) - fortune semiconductor corp. rev 1 6 fs8205a ds 16_ en may for refperrfoeponecrrtetieuosnnley datasheet fs8205a dual n channel enhancement mode fs8205a datasheet pdf power mosfet for refperrfoeponecrrtetieuosnnley fortune semiconductor corporation 23f no 29 5 sec 2 zhongzheng e rd danshui dist new taipei city 251 taiwan telfaxwww ic fortune com this manual.
typical characteristics. 1rds ( on) = 28 mω max. applications datasheet search. 5w 2 n- channel sot- 23- 6 mosfets rohs datasheet download source jlcpcb assembly type smt assembly. gate- source voltage : vgs= ± 12 v 3. operating junction temperature range : tj = - 55 to 150 ℃ applications: 1. on- region characteristics @ ta= 25deg. description dual n- channel enhancement mode power mosfet fs8205a datasheet ( html) - fortune semiconductor corp. , danshui dist, new taipei city 251, taiwan.
fs8205a datasheet ( pdf) 4 page - fortune semiconductor corp. the texts in the pdf file : shenzhen cansheng industry development co. fs8205a manufacturer fuxinsemi mfr. tw unit unit unit unit ns nc unit www. pulsed drain current : idm = 25 a 5. part # fs8205a jlcpcb part # c2830320 package sot- 23- 6 description 20v 6a 19. this data sheet provides all the information ( according to the table of contents) from fuxinsemi fs8205a 6- pin dual n- channel enhancement mode mosfet. pdf download html fs8205a datasheet ( pdf) 3 page - fortune semiconductor corp.
2 typical characteristics figure1. an n- channel mosfet ( metal oxide semiconductor field effect transistor) is a type of field effect transistor ( fet) that uses an n- type semiconductor material as the conducting channel to control the flow of current. continuous drain current : fs8205a datasheet pdf id = 6 a 4. com this manual contains new product information.
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